Irf740 n Channel Power Mosfet
Irf740 n Channel Power Mosfet
SKU:B224,L10,Th5
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IRF740 MOSFET - N-Channel Transistor IRF740 is type of N-Channel enhancement mode power field effect transistors which are using planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation.
The IRF740 is an N-Channel Power MOSFET which can switch loads upto 400V. The Mosfet could switch loads that consume upto 10A, it can turned on by provide a gate threshold voltage of 10V across the Gate and Source pin. Since the mosfet is for switching high current high voltage loads it has a relatively high gate voltage, hence cannot be used directly with a I/O pin of a CPU.
IRF740 N-Channel Power MOSFET
The IRF740 is an N-Channel Power MOSFET which can switch loads upto 400V. The Mosfet could switch loads that consume upto 10A, it can turned on by provide a gate threshold voltage of 10V across the Gate and Source pin. Since the mosfet is for switching high current high voltage loads it has a relatively high gate voltage, hence cannot be used directly with a I/O pin of a CPU. If you prefer a mosfet with low gate voltage then try IRF540N or 2N7002 etc.
One considerable disadvantage of the IRF740 Mosfet is its high on-resistance (RDS) value which is about 0.55 ohms. Hence this mosfet cannot be used in applications where high switching efficiency is required. The Mosfet requires a driver circuit to provide 10V to the gate pin of this Mosfet the simplest driver circuit can be build using a transistor. It is relatively cheap and has very low thermal resistance, added to this the mosfet also has good switching speeds and hence can be used in DC-DC converter circuits.
Features
- N-Channel Power MOSFET
- Continuous Drain Current (ID): 10A
- Gate threshold voltage (VGS-th) is 10V (limit = ±20V)
- Drain to Source Breakdown Voltage: 400V
- Drain Source Resistance (RDS) is 0.55 Ohms
- Rise time and fall time is 27nS and 24nS
- Available in To-220 package
Applications
- Switching high power devices
- Inverter Circuits
- DC-DC Converters
- Control speed of motors
- LED dimmers or flashers
- High Speed switching applications
Description
IRF740 MOSFET - N-Channel Transistor IRF740 is type of N-Channel enhancement mode power field effect transistors which are using planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation.
The IRF740 is an N-Channel Power MOSFET which can switch loads upto 400V. The Mosfet could switch loads that consume upto 10A, it can turned on by provide a gate threshold voltage of 10V across the Gate and Source pin. Since the mosfet is for switching high current high voltage loads it has a relatively high gate voltage, hence cannot be used directly with a I/O pin of a CPU.
IRF740 N-Channel Power MOSFET
The IRF740 is an N-Channel Power MOSFET which can switch loads upto 400V. The Mosfet could switch loads that consume upto 10A, it can turned on by provide a gate threshold voltage of 10V across the Gate and Source pin. Since the mosfet is for switching high current high voltage loads it has a relatively high gate voltage, hence cannot be used directly with a I/O pin of a CPU. If you prefer a mosfet with low gate voltage then try IRF540N or 2N7002 etc.
One considerable disadvantage of the IRF740 Mosfet is its high on-resistance (RDS) value which is about 0.55 ohms. Hence this mosfet cannot be used in applications where high switching efficiency is required. The Mosfet requires a driver circuit to provide 10V to the gate pin of this Mosfet the simplest driver circuit can be build using a transistor. It is relatively cheap and has very low thermal resistance, added to this the mosfet also has good switching speeds and hence can be used in DC-DC converter circuits.
Features
- N-Channel Power MOSFET
- Continuous Drain Current (ID): 10A
- Gate threshold voltage (VGS-th) is 10V (limit = ±20V)
- Drain to Source Breakdown Voltage: 400V
- Drain Source Resistance (RDS) is 0.55 Ohms
- Rise time and fall time is 27nS and 24nS
- Available in To-220 package
Applications
- Switching high power devices
- Inverter Circuits
- DC-DC Converters
- Control speed of motors
- LED dimmers or flashers
- High Speed switching applications